Deposition apparatus and deposition method using the same

ABSTRACT

A deposition apparatus including a gas supply unit, including: a first process gas supply unit blowing a first process gas onto a deposition-target surface; a second process gas supply unit blowing a second process gas different from the first process gas onto the deposition-target surface of the substrate; and air curtain units blocking an area between an area where the process gas is blown and an area where the second process gas is blown, by blowing an inert gas.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a division of U.S. patent application Ser. No.16/122,75, filed on Sep. 5, 2018, which claims priority from and thebenefit of Korean Patent Application No. 10-2017-0182639, filed on Dec.28, 2017, which is hereby incorporated by reference for all purposes asif fully set forth herein.

BACKGROUND Field

Exemplary embodiments of the invention relate generally to a depositionapparatus used for performing deposition to form thin films by supplyinga process gas onto a surface of an object and a method of depositionusing the same.

Discussion of the Background

In processes of manufacturing thin films, such as forming thin filmsused in organic light emitting displays, a chemical vapor deposition(CVD) process is frequently used for forming thin films by supplying aprocess gas onto a surface of an object in a deposition chamber. Thatis, by putting a mask on a substrate and supplying the process gasthereon, thin films formed due to chemical reactions are deposited onthe substrate, according to an opening pattern of the mask. A plasmaenhanced chemical vapor deposition (PECVD) process, which is a processof depositing a process gas to be converted to plasma by applying a highvoltage to a gas supply unit while supplying the process gas to betweenthe substrate and the gas supply unit, and an atomic layer deposition(ALD) process, which is a process of depositing a process gas to beextremely thin, for example, as thin as an atomic layer, are also widelyused.

The above information disclosed in this Background section is only forunderstanding of the background of the inventive concepts, and,therefore, it may contain information that does not constitute priorart.

SUMMARY

In various deposition processes as described above, cases in which onlyone kind of thin film is formed are not very common, and in general, aplurality of thin film layers are formed as a multilayer stack.Accordingly, to form thin film layers as a multilayer stack, in therelated art, a deposition process has typically been performed in amethod including: preparing a plurality of chambers; depositing a thinfilm layer on a substrate in one of the chambers; and forming a nextthin film layer by transferring the substrate to a next chamber, or hasbeen performed in a method including: depositing a thin film layer in achamber; completely exhausting a process gas; and forming a next thinfilm layer by injecting a next process gas into the chamber. However,when a deposition process is performed in the aforementioned methods,whether the substrate is transferred to several chambers during theprocess or the process gas is consecutively changed in one same chamber,a working standby time between operations greatly increases, whileproductivity significantly decreases, and as the substrate is frequentlytransferred, the risk of breakage during the process may also increase.

One or more exemplary embodiments of the invention include a depositionapparatus for forming different kinds of deposition films by using onesame process in one same chamber and a method of deposition using thesame.

Additional features of the inventive concepts will be set forth in thedescription which follows, and in part will be apparent from thedescription, or may be learned by practice of the inventive concepts.

According to one or more exemplary embodiments, a deposition apparatusincludes a deposition chamber, a susceptor supporting a substrate in thedeposition chamber, a gas supply unit supplying process gas to thesubstrate, wherein the gas supply unit includes: a first process gassupply unit blowing first process gas to a deposition-target surface; asecond process gas supply unit blowing second process gas different fromthe first process gas to the deposition-target surface of the substrate;and air curtain units blocking an area between an area to which thefirst process gas is blown and an area to which the second process gasis blown, by blowing inert gas.

The gas supply unit may further include a first exhaust unit configuredto form a circulation path for the first process gas between thedeposition-target surface of the substrate and the first process gassupply unit by withdrawing the first process gas, and a second exhaustunit configured to form a circulation path for the second process gasbetween the deposition-target surface of the substrate and the secondprocess gas supply unit by withdrawing the second process gas.

A distance between the gas supply unit and the deposition-target surfaceof the substrate may be in a range of from 1.5 mm to 4 mm.

The susceptor may perform a reciprocating motion in the depositionchamber, having the gas supply unit as a center.

The deposition chamber may be provided with extra areas sufficient forthe deposition-target surface of the substrate to pass the entire areain which the first process gas supply unit and the second process gassupply unit are included.

The first process gas may include a mixture forming a nitride film onthe deposition-target surface of the substrate, and the second processgas may include a mixture forming an oxide film on the deposition-targetsurface of the substrate.

The first process gas may include a mixture forming an inorganic layeron the substrate, and the second process gas may include a mixtureforming an organic layer on the substrate.

The first process gas may include an atomic layer reaction source to beabsorbed by the substrate, and the second process gas may include atomiclayer reaction gas to occur a film-formation reaction with the absorbedreaction source.

The inert gas may also purge extra reaction source overlaid on andabsorbed by an atomic layer formed by the film forming reaction.

The first process gas may include source to form a film on thesubstrate, and the second process gas may include surface treatment gasto reform the thin film formed by the first process gas.

According to one or more exemplary embodiments, a method of depositionincludes: preparing, in a deposition chamber, a first process gas supplyunit blowing first process gas on a deposition-target surface, a secondprocess gas supply unit blowing second process gas, which is differentfrom the first process gas, on the deposition-target surface of thesubstrate, and air curtain units blocking an area between an area wherethe first process gas is blown and an area where the second process gasis blown, by blowing inert gas; forming a thin film layer made of thefirst process gas and a thin film layer made of the second process gason the deposition-target surface of the substrate, by blowing the firstprocess gas and the second process gas toward the substrate.

The method may further include: forming a circulation path for the firstprocess gas between the surface of the substrate and the first processgas supply unit, by withdrawing the first process gas to a first exhaustunit provided in the gas supply unit; forming a circulation path for thesecond process gas between the surface of the substrate and the secondprocess gas supply unit, by withdrawing the second process gas to asecond exhaust unit provided in the gas supply unit.

A distance between the gas supply unit and the deposition-targetsubstrate of the surface may be maintained to be in a range of from 1.5mm to 4 mm.

While the first process gas and the second process gas are being blown,the substrate may be moved to perform a reciprocating motion, having thegas supply unit as a center.

When the substrate moves from one side to another side having the gassupply unit as a center, the deposition-target surface of the substratemay pass through the entire area including the first process gas supplyunit and the second process gas supply unit.

The first process gas may include a mixture forming a nitride film onthe deposition-target surface of the substrate, and the second processgas may include a mixture forming an oxide film on the deposition-targetsurface of the substrate.

The first process gas may include a mixture forming an inorganic layeron the substrate, and the second process gas may include a mixtureforming an organic layer on the substrate.

The first process gas may include an atomic layer reaction source to beabsorbed by the substrate, and the second process may include atomiclayer reaction gas to cause a film-forming reaction with the absorbedreaction source.

The inert gas may also purge extra reaction source overlaid on andabsorbed by an atomic layer formed by the film-forming reaction.

The first process gas may include a source to form a film on thesubstrate, and the second process gas may include surface treatment gasto reform a thin film made of the first process gas.

It is to be understood that both the foregoing general description andthe following detailed description are exemplary and explanatory and areintended to provide further explanation of the invention as claimed.

BRIEF DESCRIPTION OF THE DRAWINGS

The accompanying drawings, which are included to provide a furtherunderstanding of the invention and are incorporated in and constitute apart of this specification, illustrate exemplary embodiments of theinvention, and together with the description serve to explain theinventive concepts.

FIG. 1 is a cross-sectional view schematically showing a structure of adeposition apparatus according to an exemplary embodiment.

FIG. 2 is a cross-sectional view showing an inner structure of a gassupply unit in the deposition apparatus shown in FIG. 1 .

FIGS. 3A, 3B, 3C, and 3D are cross-sectional views showing a depositionprocess using the deposition apparatus shown in FIG. 1 .

FIG. 4 is a cross-sectional view schematically illustrating a structureof an organic light emitting display, as an example of an object thatmay be manufactured by using the deposition apparatus shown in FIG. 1 .

DETAILED DESCRIPTION

In the following description, for the purposes of explanation, numerousspecific details are set forth in order to provide a thoroughunderstanding of various exemplary embodiments or implementations of theinvention. As used herein “embodiments” and “implementations” areinterchangeable words that are non-limiting examples of devices ormethods employing one or more of the inventive concepts disclosedherein. It is apparent, however, that various exemplary embodiments maybe practiced without these specific details or with one or moreequivalent arrangements. In other instances, well-known structures anddevices are shown in block diagram form in order to avoid unnecessarilyobscuring various exemplary embodiments. Further, various exemplaryembodiments may be different, but do not have to be exclusive. Forexample, specific shapes, configurations, and characteristics of anexemplary embodiment may be used or implemented in another exemplaryembodiment without departing from the inventive concepts.

Unless otherwise specified, the illustrated exemplary embodiments are tobe understood as providing exemplary features of varying detail of someways in which the inventive concepts may be implemented in practice.Therefore, unless otherwise specified, the features, components,modules, layers, films, panels, regions, and/or aspects, etc.(hereinafter individually or collectively referred to as “elements”), ofthe various embodiments may be otherwise combined, separated,interchanged, and/or rearranged without departing from the inventiveconcepts.

The use of cross-hatching and/or shading in the accompanying drawings isgenerally provided to clarify boundaries between adjacent elements. Assuch, neither the presence nor the absence of cross-hatching or shadingconveys or indicates any preference or requirement for particularmaterials, material properties, dimensions, proportions, commonalitiesbetween illustrated elements, and/or any other characteristic,attribute, property, etc., of the elements, unless specified. Further,in the accompanying drawings, the size and relative sizes of elementsmay be exaggerated for clarity and/or descriptive purposes. When anexemplary embodiment may be implemented differently, a specific processorder may be performed differently from the described order. Forexample, two consecutively described processes may be performedsubstantially at the same time or performed in an order opposite to thedescribed order. Also, like reference numerals denote like elements.

When an element, such as a layer, is referred to as being “on,”“connected to,” or “coupled to” another element or layer, it may bedirectly on, connected to, or coupled to the other element or layer orintervening elements or layers may be present. When, however, an elementor layer is referred to as being “directly on,” “directly connected to,”or “directly coupled to” another element or layer, there are nointervening elements or layers present. To this end, the term“connected” may refer to physical, electrical, and/or fluid connection,with or without intervening elements. Further, the D1-axis, the D2-axis,and the D3-axis are not limited to three axes of a rectangularcoordinate system, such as the x, y, and z-axes, and may be interpretedin a broader sense. For example, the D1-axis, the D2-axis, and theD3-axis may be perpendicular to one another, or may represent differentdirections that are not perpendicular to one another. For the purposesof this disclosure, “at least one of X, Y, and Z” and “at least oneselected from the group consisting of X, Y, and Z” may be construed as Xonly, Y only, Z only, or any combination of two or more of X, Y, and Z,such as, for instance, XYZ, XYY, YZ, and ZZ. As used herein, the term“and/or” includes any and all combinations of one or more of theassociated listed items.

Although the terms “first,” “second,” etc. may be used herein todescribe various types of elements, these elements should not be limitedby these terms. These terms are used to distinguish one element fromanother element. Thus, a first element discussed below could be termed asecond element without departing from the teachings of the disclosure.

Spatially relative terms, such as “beneath,” “below,” “under,” “lower,”“above,” “upper,” “over,” “higher,” “side” (e.g., as in “sidewall”), andthe like, may be used herein for descriptive purposes, and, thereby, todescribe one elements relationship to another element(s) as illustratedin the drawings. Spatially relative terms are intended to encompassdifferent orientations of an apparatus in use, operation, and/ormanufacture in addition to the orientation depicted in the drawings. Forexample, if the apparatus in the drawings is turned over, elementsdescribed as “below” or “beneath” other elements or features would thenbe oriented “above” the other elements or features. Thus, the exemplaryterm “below” can encompass both an orientation of above and below.Furthermore, the apparatus may be otherwise oriented (e.g., rotated 90degrees or at other orientations), and, as such, the spatially relativedescriptors used herein interpreted accordingly.

The terminology used herein is for the purpose of describing particularembodiments and is not intended to be limiting. As used herein, thesingular forms, “a,” “an,” and “the” are intended to include the pluralforms as well, unless the context clearly indicates otherwise. Moreover,the terms “comprises,” “comprising,” “includes,” and/or “including,”when used in this specification, specify the presence of statedfeatures, integers, steps, operations, elements, components, and/orgroups thereof, but do not preclude the presence or addition of one ormore other features, integers, steps, operations, elements, components,and/or groups thereof. It is also noted that, as used herein, the terms“substantially,” “about,” and other similar terms, are used as terms ofapproximation and not as terms of degree, and, as such, are utilized toaccount for inherent deviations in measured, calculated, and/or providedvalues that would be recognized by one of ordinary skill in the art.

Various exemplary embodiments are described herein with reference tosectional and/or exploded illustrations that are schematic illustrationsof idealized exemplary embodiments and/or intermediate structures. Assuch, variations from the shapes of the illustrations as a result, forexample, of manufacturing techniques and/or tolerances, are to beexpected. Thus, exemplary embodiments disclosed herein should notnecessarily be construed as limited to the particular illustrated shapesof regions, but are to include deviations in shapes that result from,for instance, manufacturing. In this manner, regions illustrated in thedrawings may be schematic in nature and the shapes of these regions maynot reflect actual shapes of regions of a device and, as such, are notnecessarily intended to be limiting.

Unless otherwise defined, all terms (including technical and scientificterms) used herein have the same meaning as commonly understood by oneof ordinary skill in the art to which this disclosure is a part. Terms,such as those defined in commonly used dictionaries, should beinterpreted as having a meaning that is consistent with their meaning inthe context of the relevant art and should not be interpreted in anidealized or overly formal sense, unless expressly so defined herein.

FIG. 1 schematically shows a structure of a deposition apparatusaccording to an exemplary embodiment, and FIG. 2 particularly shows aninner structure of a gas supply unit 100 in the deposition apparatusshown in FIG. 1 .

As illustrated in FIG. 1 , the deposition apparatus according to anexemplary embodiment includes a susceptor 200 supporting a substrate 10in a deposition chamber 400, a mask 300 provided with an opening todefine a deposition area such that a targeted deposition film is formedon the substrate 10, and a gas supply unit 100 supplying the process gasto the substrate 10. Therefore, when the gas supply unit 100 blowsprocess gas toward a deposition-target surface of the substrate 10,which is opened by the mask 300, a thin film layer made of the processgas is formed. Reference number 500 denotes a radio frequency (RF)power. A deposition process, where deposition is performed whileinjecting process gas into an area between the substrate 10 and the gassupply unit 100 in a state where the RF power is off, is a chemicalvapor deposition (CVD) process, and a deposition process, which isperformed to form plasma between the substrate 10 and the gas supplyunit 100 by applying a high voltage to the gas supply unit 100 by the RFpower 500, is a plasma enhanced chemical vapor deposition (PECVD)process. In other words, the deposition apparatus described in theexemplary embodiment may be applied to deposition processes regardlessof types of the processes, and may, for example, be applied to an atomiclayer deposition (ALD) process. Applying the deposition apparatus tovarious deposition processes will be described again later.

The gas supply unit 100 includes a first process gas supply unit 110blowing a first process gas 110 a, a second process gas supply unit 120blowing a second process gas 120 a, and air curtain units 130 blowinginert gas, such as argon, to prevent the first and second process gases110 a and 120 a from being spread around and mixed. In other words, thegas supply unit 100 simultaneously supplies the first process gas 110 aand the second process gas 120 a different from the first process gas110 a, instead of supplying only one kind of process gas to thesubstrate 10, such that different types of thin film layers are formedin one same process, and makes barriers using the air curtain units 130blowing inert gas 130 a to prevent the first and second process gases110 a and 120 a from being mixed.

The susceptor 200 loaded with the substrate 10 may perform areciprocating motion having the gas supply unit 100 as a center in thedeposition chamber 400, and extra areas, which are sufficient for theentire deposition-target surface of the substrate 10 to pass the areasto which the first and the second process gases 110 a and 120 a areblown, are respectively secured in the left and right of an inner areaof the deposition chamber 400.

In this case, a distance d between the gas supply unit 100 and thesurface of the substrate 10 may be maintained to be as narrow as from1.5 mm to 4 mm such that the first and second process gases 110 a and120 a form circulation paths for blow and exhaust and not be scatteredaround.

In this regard, referring to FIG. 2 , a structure of the gas supply unit100 is described in more detail.

As described above, the gas supply unit 100 includes the first processgas supply unit 110 including a first nozzle 111 blowing the firstprocess gas 110 a and the second process gas supply unit 120 including asecond nozzle 121 blowing the second process gas 120 a, and the firstand second process gases 110 a and 120 a are prevented from being mixed,due to inert gas 130 a, such as argon, blown by the air curtain units130 around areas to which the first and the second process gases 110 aand 120 a are respectively blown.

And a first exhaust unit 112 and a second exhaust unit 122, which absorband discharge the first and second process gases 110 a and 120 a thatare blown, are respectively provided right next to the first nozzle 111and the second nozzle 121. Accordingly, circulation paths for blow andexhaust of the first process gas 110 a and the second process gas 120 aare respectively formed between the substrate 10 and the first processgas supply unit 110 and between the substrate and the second process gassupply unit 120, and to maintain the circulation paths to be in a stablestate, gaps d between the circulation paths may be maintained to be asnarrows as from 1.5 mm to 4 mm. Although the air curtain units 130, to acertain degree, prevent the first and second process gases 110 a and 120a from being scattered, the circulation paths for blow and exhaust maybe formed to more stably prevent the process gases from being mixed.

Before describing various method of deposition using the depositionapparatus having the aforementioned structure, as an example of anobject in which thin film layers may be formed by using the depositionapparatus, an organic light emitting display will now be brieflydescribed with reference to FIG. 4 .

FIG. 4 shows an organic light emitting display including thin filmencapsulation layers 12 that may be formed by using the aforementioneddeposition apparatus.

Referring to FIG. 4 , the organic light emitting display has a structurein which a display unit 11 implementing images are provided on thesubstrate 10, and the thin film encapsulation layers 12 are put on thedisplay unit 11. Accordingly, the display unit 11 is sealed up betweenthe substrate 10 and the thin film encapsulation layers 12, and the thinfilm encapsulation layers 12 protect the display unit 11 from moistureand air from outside.

The thin film encapsulation layers 12 may be formed by piling up aplurality of inorganic layers, and may also be made by alternativelypiling up inorganic layers and organic layers. The inorganic layersmainly protect the thin film encapsulation layers 12 from moisturetransmission, and the organic layers flatten curves of lower layers withfluidity, and simultaneously, give flexibility to the thin filmencapsulation layers 12.

Therefore, when forming the thin film encapsulation layers 12 by pilingup different kinds of inorganic layers or by piling up inorganic layersand organic layers, the aforementioned deposition apparatus may be used.

Referring to FIGS. 3A through 3D, a deposition process using thedeposition apparatus will be described.

First, as illustrated in FIG. 3A, the substrate 10 and the mask 300 areplaced on the susceptor 200 in the deposition chamber 400, the susceptoris moved to one side, and the entire deposition-target surface of thesubstrate 10 sequentially passes an area where the first process gas 110a is blown and an area where the second process gas 120 a is blown.

By doing so, as illustrated in FIG. 3B, a first thin film layer 12 amade of the first process gas 110 a and a second thin film layer 12 bmade of the second process gas 120 a are sequentially formed in a way ofdeposition. For example, when the first process gas 110 a is a mixtureof SiH₄+NH₃+N₂ and the second process gas 120 a is a mixture ofSiH₄+N₂O, the first thin film layer 12 a is a SiN_(X) nitride film, andthe second thin film layer 12 b is a SiO_(X) oxide film. That is, takingthe thin film encapsulation layers 12 as an example, the thin filmencapsulation layers 12 are formed by piling up different kinds ofinorganic layers. In this case, the thin film encapsulation layers 12are not classified into nitride films and oxide films to be deposited inseveral deposition chambers or deposited while changing the process gasin one same deposition chamber 400, but are deposited by one sameprocess in one same deposition chamber 400. When each of the first thinfilm layer 12 a and the second thin film layer 12 b is formed to beplural in number, instead of only one each, as illustrated in FIGS. 3Cand 3D, deposition is repeated while having the susceptor 200 perform areciprocating motion to the left and the right. By doing so, the thinfilm layers are piled up in an order of the first thin film layer 12a—the second thin film layer 12 b—the second thin film layer 12 b—thefirst thin film layer 12 a—the first thin film layer 12 a—the secondthin film layer 12 b, and formed into a multilayer stack.

Accordingly, by using the aforementioned method, the different kinds ofprocess gases 110 a and 120 a are provided in one same process in thesame deposition chamber 400, and a plurality of thin film layers areefficiently and promptly formed.

In the exemplary embodiment described above, the first thin film layer12 a and s the second thin film layer 12 b are formed into differentkinds of inorganic layers, but the first process gas 110 a and thesecond process gas 120 a may also be formed into inorganic layers andorganic layers. That is, when the first process gas 110 a is a mixtureto form inorganic layers such as SiN_(X) or SiO_(X) and the secondprocess gas 120 a is a mixture of Hexamethyldisiloxane and N₂O to formorganic layers, the first thin film layer 12 a is an inorganic layer ofa nitride film or an oxide film, and the second thin film layer 12 b isan organic layer. In other words, taking the thin film encapsulationlayers 12 as an example, the thin film encapsulation layers 12 areformed by alternatively piling up inorganic layers and organic layers.In this case, the thin film encapsulation layers 12 are not depositedafter being classified into the inorganic layers and the organic layersin several deposition chambers or deposited by changing process gas inone same process chamber, but are deposited by one same process in onesame deposition chamber 400.

The first process gas 110 a and the second process gas 120 a may also beused in the ALD process. That is, when the first process gas 110 a is anatomic layer reaction source absorbed by the substrate 10 and the secondprocess gas 120 a is atomic reaction gas causing a film-forming reactionwith the absorbed atomic reaction source, an atomic layer is formed dueto simultaneous supply of the reaction source and the reaction gas. Inthis case, extra reaction source may be overlaid on and absorbed by anatomic layer formed by the film-forming reaction, and the inert gas 130a also blows and purges the overlaid and absorbed extra reaction source.

As another example, the first process gas 110 a and the second processgas 120 a may be used for surface reforming. That is, the first processgas 110 a is a source to form a film on the substrate 10, and the secondprocess gas 120 a includes surface treatment gas such as H₂, Ar, O₂, N₂,or the like for reforming a surface of a thin film made of the firstprocess gas 110 a. By doing so, a certain thin film layer is formed onthe substrate 10 due to the first process gas 110 a, and the secondprocess gas 120 a makes materials, which are absorbed by the thin filmlayer without occurring reactions with the thin film layer, additionallyoccur reactions with the thin film layer, or blows up the materials.

As described above, by using the aforementioned deposition apparatus,various deposition processes may be effectively and promptly performedwhile simultaneously supplying different kinds of process gases.

Therefore, by using the aforementioned deposition apparatus and thedeposition method using the same, different kinds of thin films may bedeposited by one same process in one same chamber without inserting andtaking the substrate into and out of the chamber. Accordingly,production rate may be highly improved, and as the substrate does notneed to be moved, danger of breakage may also be reduced.

Although certain exemplary embodiments and implementations have beendescribed herein, other embodiments and modifications will be apparentfrom this description. Accordingly, the inventive concepts are notlimited to such embodiments, but rather to the broader scope of theappended claims and various obvious modifications and equivalentarrangements as would be apparent to a person of ordinary skill in theart.

What is claimed is:
 1. A deposition apparatus, comprising: a depositionchamber; a susceptor configured for supporting a substrate in thedeposition chamber; and a gas supply unit configured for supplying aprocess gas to the substrate, wherein the gas supply unit comprises: afirst process gas supply unit configured for blowing a first process gasonto a deposition-target surface; a second process gas supply unitconfigured for blowing a second process gas different from the firstprocess gas onto the surface of the substrate; and air curtain unitsconfigured to blow an inert gas for blocking a first area disposedbetween a second area where the first process gas is blown and a thirdarea where the second process gas is blown.
 2. The deposition apparatusof claim 1, wherein the gas supply unit further comprises: a firstexhaust unit configured to form a circulation path for the first processgas between the deposition-target surface of the substrate and the firstprocess supply unit by withdrawing the first process gas; and a secondexhaust unit configured to form a circulation path for the secondprocess gas between the deposition-target surface of the substrate andthe second process gas supply unit by withdrawing the second processgas.
 3. The deposition apparatus of claim 2, wherein a distance betweenthe gas supply unit and the deposition-target surface of the substrateis in a range of 1.5 mm to 4 mm.
 4. The deposition apparatus of claim 1,wherein the susceptor is configured to perform a reciprocating motion inthe deposition chamber, having the gas supply unit at a center thereof.5. The deposition apparatus of claim 4, wherein the deposition chambercomprises extra areas sufficient for the deposition-target surface ofthe substrate to pass an entire area comprising the first process gassupply unit and the second process gas supply unit.
 6. The depositionapparatus of claim 1, wherein: the first process gas comprises a mixtureforming a nitride film on the deposition-target surface of thesubstrate; and the second process gas comprises a mixture forming anoxide film on the deposition-target surface of the substrate.
 7. Thedeposition apparatus of claim 1, wherein: the first process gascomprises a mixture forming an inorganic layer on the substrate; and thesecond process gas comprises a mixture forming an organic layer on thesubstrate.
 8. The deposition apparatus of claim 1, wherein: the firstprocess gas comprises an atomic layer reaction source to be absorbed bythe substrate; and the second process gas comprises an atomic layerreaction gas to cause a film-formation reaction with the absorbedreaction source.
 9. The deposition apparatus of claim 8, wherein theinert gas also purges extra reaction source overlaid on and absorbed byan atomic layer formed by the film-forming reaction.
 10. The depositionapparatus of claim 1, wherein: the first process gas comprises source toform a film on the substrate; and the second process gas comprisessurface treatment gas to reform a thin film made of the first processgas.